Fig. 3: Manipulation of the HQLHE in a dual-gated Device B1.
From: Half-quantized layer hall effect as a probe of quantized axion field
a, c Zero field Hall conductance \({\sigma }_{{xy}}\) as a function of \({V}_{{\rm{tg}}}\) and \({V}_{{\rm{b}}{\rm{g}}}\) with parallel (a) and antiparallel (c) magnetization configuration. The regions indicated by red dashed lines correspond to (a) QAH (\({\sigma }_{{xy}}={e}^{2}/h\)) and (c) axion insulator (\({\sigma }_{{xy}}=0\)) plateaus respectively. b, d Zero field Hall conductance \({\sigma }_{{xy}}\) as a function of \({V}_{{\rm{bg}}}\) at various \({V}_{\text{tg}}\) with parallel (b) and antiparallel (d) magnetization configuration, extracted from (a) and (c). e Calculated phase diagram for our axion insulator 4-band model, with \({\sigma }_{{xy}}\) as a function of \({V}_{t}/{M}_{\text{b}}\) and \({V}_{\text{b}}/{M}_{\text{b}}\). The regions defined by the black dashed lines correspond to HQLHE (\({\sigma }_{{xy}}={e}^{2}/2h\)) and axion insulator (\({\sigma }_{{xy}}=0\)) plateaus. The region defined by the pink dashed lines is a simulation of (c). f Extracted \({\sigma }_{{xy}}\) as a function of \({V}_{\text{b}}/{M}_{\text{b}}\) at 3 different Vt/Mb values. Error bars correspond to the standard deviation obtained from 30 independent disorder configurations.
