Fig. 4: STM tip-induced charge-state manipulation of defects in diamond.
From: Atomic-scale imaging and charge state manipulation of NV centers by scanning tunneling microscopy
a, b STM topography (VBias = -1.00 V, ISetpoint = 70 pA) of an NV- defect (labeled Defect 6) (a) before and (b) after tip-induced gating manipulation of the charge state using a standard W tip by applying +5 V to the sample relative to the tip. c, dI/dV spectra (VBias = 1.00 V, ISetpoint = 70 pA) before and after manipulation of Defect 6 showing the disappearance of the strong defect peak after manipulation. d, e STM topography (VBias = -900 mV, ISetpoint = 70 pA) of another NV- defect, labeled Defect 7, (d) before and (e) after charge-state manipulation using an Au-coated W tip, again by applying +5 V to the sample relative to the tip. f dI/dV spectra (VBias = -1.20 V, ISetpoint = 70 pA) before and after manipulation of Defect 7, again showing the disappearance of the strong defect peak after manipulation. All scale bars in this figure correspond to 0.5 nm.
