Fig. 1: Intrinsically stretchable semiconductor materials and transfer characteristics of their field-effect transistors (FETs). | Nature Communications

Fig. 1: Intrinsically stretchable semiconductor materials and transfer characteristics of their field-effect transistors (FETs).

From: Intrinsically stretchable 2D MoS2 transistors

Fig. 1: Intrinsically stretchable semiconductor materials and transfer characteristics of their field-effect transistors (FETs).

Single-walled carbon nanotubes (SWCNT)-based composites, polymer semiconductors with or without elastomer blending, and flake-type transition metal dichalcogenide (TMDC) materials enable p- and n-type stretchable transistors with distinct on-current (Ion) and off-current (Ioff) characteristics.

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