Fig. 1: A foundry-compatible strategy for enhancing the performance of carbon nanotube field-effect transistors (CNTFETs) through γ-ray irradition.
From: Boosting carbon nanotube transistors through γ-ray irradiation
a Schematic diagram of γ-ray irradiation on wafer-scale CNTFETs. This room-temperature, high-throughput processing strategy meet the foundry requirements for efficiency, uniformity and cost-effectiveness. b Schematic diagram of the proposed quasi-gate-all-around (quasi-GAA) CNTFET, where the nanometer-thick CNT channel is modulated by two vertically connected gates. c Scanning electron microscopy (SEM) image of the deposited CNT network film. Scale bar: 100 nm. d Raman spectra of a single ultra-clean CNT before (0 Mrad(Si)) and after (100 Mrad(Si)) irradiation. The D peak remains negligible even after a total ionizing dose (TID) of 100 Mrad(Si), confirming the radiation tolerance of CNTs. The inset illustrates the process for obtaining an ultraclean CNT. e Raman spectra of conjugated PCz (poly[9-(1-octylonoyl)−9H-carbazole- 2,7-diyl]) molecules before (0 Mrad(Si)) and after (100 Mrad(Si)) irradiation. The inset displays the structural formula of PCz, with a characteristic wavenumber at 1622.4 cm−1. f Raman spectra of CNT network films irradiated at 0 Mrad(Si), 3 Mrad(Si), and 100 Mrad(Si), respectively. The typical peak of PCz is indicated by a dashed line. g X-ray photoelectron spectroscopy (XPS) spectra of CNT network films irradiated at 0 Mrad(Si), 3 Mrad(Si), and 100 Mrad(Si), respectively. The peak positions for sp2 and sp3 are marked with dashed lines. h Area ratio of sp2, sp3, C-O, and C = O of CNT network films irradiated at 0 Mrad(Si), 3 Mrad(Si), and 100 Mrad(Si), respectively.
