Fig. 2: High-performance quasi-GAA CNTFETs.
From: Boosting carbon nanotube transistors through γ-ray irradiation
a Photograph of the as-fabricated CNTFETs on a 4-inch Si/SiO2 substrate. b Cross-sectional high-resolution transmission electron microscope (TEM) image of the as-fabricated CNTFET. Scale bar: 10 nm. c Cross-sectional energy dispersive X-ray spectroscopy (EDS) mapping of the as-fabricated CNTFET, see Supplementary Note. 18 for more details. Scale bar: 10 nm. d EDS line analysis of the following elements: Gold (Au), Titanium (Ti), Hafnium (Hf), Aluminum (Al), and Oxygen (O). e Typical transfer curves of the CNTFET at drain-to-source voltage (Vds) of 2 V and 50 mV, respectively. The subthreshold swing (SS) of the device is 102.0 mV dec−1 at low bias (50 mV) and 173.7 mV dec−1 at saturated bias (2 V). Inset: False-color SEM image of the representative CNTFET, with a channel length (Lch) and width of 4 μm and 28 μm, respectively. Scale bar: 5 μm. f Typical output curves of the CNTFET with gate-to-source voltage (Vgs) varying from 2 V to 0 V in step of − 0.2 V. g Benchmarking of on-state current (Ion) versus SS of our results with reported N-type networked CNTFETs with micrometer Lch. Vds is labeled in the figure. Inset plots the experimental results of Ion versus TID.
