Fig. 3: γ-ray irradiation effects on CNTFETs.
From: Boosting carbon nanotube transistors through γ-ray irradiation
a Transfer curves of 25 devices used for subsequent irradiation tests. The inset displays the median values of typical electrical parameters. b Transfer curves of a typical CNTFET irradiated at 0 Mrad(Si), 3 Mrad(Si), and 100 Mrad(Si), respectively. Solid lines represent logarithmic coordinates, and dashed lines represent linear coordinates. c Band diagrams of the CNTFETs irradiated at 3 Mrad(Si) (worst condition). d Band diagrams of the CNTFETs irradiated at 100 Mrad(Si) (best condition). e Performance variation of CNTFETs and CNT films within the TID range of 0 to 100 Mrad(Si). As the TID increases, device performance initially deteriorates and then gradually improves, with an inflection point at 3 Mrad(Si). Within 100 Mrad(Si), the threshold voltage (Vth) and gate-to-source current (Igs) experience negligible changes. The box plots show the median (center line), interquartile range (box boundaries), and minimum/maximum values (whiskers).
