Fig. 4: Reliable γ-ray irradiation strategy.
From: Boosting carbon nanotube transistors through γ-ray irradiation
a Transfer curves of 100 devices, fabricated on a Si/SiO2 substrate, before (0 Mrad(Si)) and after (100 Mrad(Si)) irradiation. b Statistical analysis of the Vth, SS, and Ioff of devices in (a). c Transfer curves of 100 devices, fabricated on a Si/SiO2/PSPI substrate, before (0 Mrad(Si)) and after (100 Mrad(Si)) irradiation. d Statistical analysis of the Vth, SS, and Ioff of devices in (c). e Benchmarking of the on/off ratio versus Ioff of our results at Vds = 2 V with reported CNTFETs with micrometer-scale Lch. Hollow and solid patterns represent N-type32,33,39,40,43 and P-type14,33,49 CNTFETs, respectively. Lch (μm) is labeled in the figure. The low-power target for transistors at 100 pA μm-1 is indicated by a dashed line. The inset plots the experimental results of the on/off ratio and TID. f Benchmarking of TID tolerance versus \(\Delta {V}_{{{{\rm{th}}}}}/{V}_{{{{\rm{dd}}}}}\) of our results with reported radiation-hardened transistors. The hollow pattern represents silicon transistors51,52,53,54,55, while the solid pattern represents CNTFETs26,27,28,56,57,58,59,60. Dose rate (rad(Si) s−1) is labeled in the figure, and NA indicates the dose rate is not available in those references.
