Fig. 2: Quantum properties at small magnetic fields in device D5.

a Transverse resistance \({R}_{{xy}}\) as a function of displacement field \(D/{\varepsilon }_{0}\) and total concentration \({n}_{{{\rm{tot}}}}\) at \(B=5\,{{\rm{mT}}}\) and \(T=20\) mK, where \({\varepsilon }_{0}\) is the vacuum permittivity. b Longitudinal resistance \({R}_{{xx}}\) as a function of total concentration and magnetic field. The onset of the Shubnikov-de Haas oscillation is shown by the red dashed lines at\(\,B=\pm 1\,{{\rm{mT}}}\). The white dashed lines show (\({n}_{{tot}}={v}_{{tot}}{eB}/h\)) the position of the \({v}_{{tot}}=\pm 4,\,\pm 12,\,\pm 20\) filling factors. c Transverse resistance \({R}_{{xy}}\) as a function of total concentration and magnetic field. The quantum Hall effect (QHE) was measured at \(D=0\,{{\rm{V}}}/{{\rm{nm}}}\). The dashed regions correspond to the \({\rho }_{q}\approx 7.3\) kΩ with an error of 2%. d, e The longitudinal and transverse resistances cuts from (b) and (c) at \(D=0\,{{\rm{V}}}/{{\rm{nm}}}\) for B = 2 mT and 5 mT. The horizontal dashed blue lines correspond to the plateaus for the total filling factors of \({\nu }_{{tot}}=\pm 4,\,\pm 12,\,\pm 20\). A developed plateau with corresponding zero longitudinal resistance is shown in (e) at \({\nu }_{{tot}}=\pm 4\). f Longitudinal resistance as a function of magnetic field and total concentration measured at T = 15 K. The black dashed lines correspond to the filling factors of \({v}_{{tot}}=\pm 4\). The green dashed line is the transverse magnetic focusing contribution from ballistic electrons in an individual graphene layer and cyclotron radius of 1.75 μm.