Fig. 4: Performance characterizations of the control and TPPC-treated IPV devices.
a Cross-sectional SEM image of the device. The scale bar is 200 nm. J-V curves of the devices with an effective area (S) of 0.1225 cm2 (b) and 1.21 cm2 (c) under WLED illumination (3000 K, 1000 lux, 285 μW cm−2). d EQE and integrated JSC. e Statistical photovoltaic parameters of PCE, FF, Voc and JSC for 51 devices under the WLED illumination (3000 K, 1000 lux, 285 μW cm-2). For the box plots, the central line indicates the median, the box edges denote the lower and upper quartiles, the whiskers show the maximum and minimum values within 1.5 times the interquartile range, and the individual points represent outliers. f Development of PCE for lead-free perovskite-based IPV devices reported in literatures and this work to date. It should be noted that since all devices are measured under different light sources, we cannot make a 1:1 comparison across all data points, but this provides a general indication of progress. g Normalized PCE of the encapsulated IPV devices measured at maximum power point (MPP) under continuous 1000 lux light illumination (ISOS-L-3 protocol) in ambient air (humidity: 40 ± 10%, temperature: 25 ± 5 °C). h Thermal stability of encapsulated IPV devices annealed at 85 °C in N2 atmosphere (ISOS-D-2 protocol). i In situ PL intensity under forward and reverse voltage scans of the devices.
