Fig. 5: Highly tunable valence band and domain switching.
From: Highly tunable band structure in ferroelectric R-stacked bilayer WSe2
a Reflectance map in the hole-doped regime versus displacement field, showing an abrupt and symmetric spectral shift indicative of valence band maximum switching and domain switching. b, c Schematics illustrating the valence band maximum switching under a strong electric field. d Doping dependence measured after the switching event, confirming the inverted band alignment.
