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Nanotwin architecture and ultra-high valley degeneracy lead to high thermoelectric performance in GeTe-based thermoelectric materials
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  • Published: 31 January 2026

Nanotwin architecture and ultra-high valley degeneracy lead to high thermoelectric performance in GeTe-based thermoelectric materials

  • Song Li1 na1,
  • Yuxuan Yang  ORCID: orcid.org/0009-0008-3700-612X2 na1,
  • Xiaoyu Fei3,4,
  • Yang Geng1,
  • Jiajun Nan1,
  • Pubao Peng1,
  • Guizhong Li1,
  • Yang Zhang2,5,
  • Xiaobing Liu  ORCID: orcid.org/0000-0002-0680-19473,4,
  • Yongsheng Zhang  ORCID: orcid.org/0000-0003-0007-05893,4,
  • Haijun Wu  ORCID: orcid.org/0000-0002-7303-379X2 &
  • …
  • Guodong Tang  ORCID: orcid.org/0000-0003-4115-42011 

Nature Communications , Article number:  (2026) Cite this article

We are providing an unedited version of this manuscript to give early access to its findings. Before final publication, the manuscript will undergo further editing. Please note there may be errors present which affect the content, and all legal disclaimers apply.

Subjects

  • Thermoelectric devices and materials
  • Thermoelectrics

Abstract

Here, we achieve a high peak ZT of 2.5 as well as an exceptional average ZT of 1.9 through nanotwin architecture and inducing ultra-high valley degeneracy. We find that nanotwins, ordered vacancy arrays and point defects serve as intense phonon scattering centers for enhancing wide-frequency phonon scattering, resulting in ultralow lattice thermal conductivity in GeTe. Interestingly, density-functional theory calculations reveal that CuBiS2 alloying realizes refined valence band alignment in GeTe, generating an ultra-high valley degeneracy of 22. The dramatic enhancement of the Seebeck coefficient induced by the ultra-high valley degeneracy contributes to remarkably enhanced power factor over a very wide temperature range. The maximum power factor reaches as high as 49 μW cm-1 K-2. Consequently, a high peak ZT as well as a large average ZT are realized in GeTe without involving toxic elements. Importantly, the presence of nanotwins boundaries in GeTe effectively provides adequate barriers to block dislocation motion, leading to excellent hardness and compressive strength. Our finding provides a feasible pathway to design fascinating thermoelectric materials with high thermoelectric performance and mechanical properties.

Data availability

The authors declare that all data supporting the findings of this study are available within the article and its Supplementary Information files or from the corresponding author.

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Acknowledgements

The work was supported by the National Natural Science Foundation of China (No. 52071182 to G.D.T., 52472250 to H.J.W., and 12474016 to Y.S.Z.), “Qinglan Project” of the Young and Middle-aged Academic Leader of Jiangsu Province (to G.D.T.), the Fundamental Research Funds for the Central Universities (No. 202510 to G.D.T.), and the program of “Distinguished Expert of Taishan Scholar” (No. tstp20221124 to Y.S.Z.).

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Author notes
  1. These authors contributed equally: Song Li, Yuxuan Yang.

Authors and Affiliations

  1. School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, China

    Song Li, Yang Geng, Jiajun Nan, Pubao Peng, Guizhong Li & Guodong Tang

  2. State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, China

    Yuxuan Yang, Yang Zhang & Haijun Wu

  3. Key Laboratory of Quantum Materials under Extreme Conditions in Shandong Province, School of Physics and Physical Engineering, Qufu Normal University, Qufu, China

    Xiaoyu Fei, Xiaobing Liu & Yongsheng Zhang

  4. Laboratory of High Pressure Physics and Material Science (HPPMS), Advanced Research Institute of Multidisciplinary Sciences, Qufu Normal University, Qufu, China

    Xiaoyu Fei, Xiaobing Liu & Yongsheng Zhang

  5. Electronic Materials Research Laboratory (Key Lab of Education Ministry), School of Electronic and Information Engineering and Instrumental Analysis Center, Xi’an Jiaotong University, Xi’an, China

    Yang Zhang

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Contributions

G.D.T. conceived the idea, designed the experiments, and supervised the research. S.L. prepared samples, analyzed data, and wrote the paper. Y.X.Y., Y.Z., and H.J.W. accomplished the microstructural characterizations and analyzed data. X.Y.F., X.B.L., and Y.S.Z. carried out the DFT calculations. Y.G. performed the fabrication and measurements for the single-leg module. J.J.N., P.B.P., and G.Z.L. helped measure the properties. All authors analyzed the results and coedited the manuscript.

Corresponding authors

Correspondence to Yongsheng Zhang, Haijun Wu or Guodong Tang.

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Li, S., Yang, Y., Fei, X. et al. Nanotwin architecture and ultra-high valley degeneracy lead to high thermoelectric performance in GeTe-based thermoelectric materials. Nat Commun (2026). https://doi.org/10.1038/s41467-026-68908-0

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  • Received: 30 October 2025

  • Accepted: 19 January 2026

  • Published: 31 January 2026

  • DOI: https://doi.org/10.1038/s41467-026-68908-0

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