Fig. 2: Injection current-dependent OAM modes dynamics in multimode VCSELs.
From: GHz dynamic holographic VCSEL chip via current-addressed modes multiplexing
a The detailed illustration of the VCSEL structure. b The OAM modes capacity of the multi-mode VCSELs with distinct oxide aperture diameters. c The emergency of spatial hole burning (SHB) effect at the active layer center of VCSEL with the increase of the current and the oxide aperture size. d The theoretical and experimental observation of a dominant OAM mode component switching from l = 1 to l = 2 with the increase of injection current.
