Table 1 Device parameters of the OSCs based on PTTz-Clx:BTP-eC9 blends under AM1.5 G (100 mW cm–2) irradiation
Device | Voc (V) | Jsc (mA cm−2) | Jcal. (mA cm−2) | FF (%) | PCE (%) |
|---|---|---|---|---|---|
PTTz-Cl0:BTP-eC9 | 0.826 (0.824 ± 0.002) | 27.27 (27.40 ± 0.15) | 26.18 | 76.83 (75.51 ± 0.98) | 17.30 (17.05 ± 0.18) |
PTTz-Cl50:BTP-eC9 | 0.856 (0.853 ± 0.002) | 29.79 (29.41 ± 0.32) | 28.25 | 80.13 (79.10 ± 0.62) | 20.42 (19.85 ± 0.33) |
PTTz-Cl100:BTP-eC9 | 0.866 (0.864 ± 0.002) | 25.95 (25.36 ± 0.81) | 24.61 | 69.72 (69.37 ± 1.64) | 15.67 (15.18 ± 0.26) |