Fig. 2: ODAS structure characterization and light adaptation performance.

a Schematic diagram of the three-dimensional structure of ODAS: from bottom to top, ITO gate, PVA dielectric layer (120 nm), PVCn: PbS NC light absorption layer (100 nm), Ag source and drain electrode (100 nm), and C₈-BTBT channel layer (50 nm). b Cross-section TEM image (scale bar: 25 nm) and corresponding EDS mapping images (scale bar: 25 nm). (c) Absorption spectra of PVCn: PbS NC blended films and C₈-BTBT channel. d Dynamic process of light adaptation mechanism: light stimulation triggers the generation of electron-hole pairs in the PVCn: PbS layer (left); electron-hole pairs are separated under gate voltage, the holes are trapped in the interface trap state and accumulate at the channel interface (middle); after light removal, the carrier is recaptured and recombined to complete the photoadaptation cycle similar to the rod cell (right). e Drain current (I_DS) with the increase of the adaptation time under different illuminances (0.146–11.7 nW cm⁻²), showing the adaptive ability to light intensity. f Relationship between the photosensitivity (P_t) and the illuminance under different adaptation times (1–30 s). g Correlation between active adaptation index (AAI) and light illuminance.