Fig. 3: Magnetotransport and Hall effect measurements.

a Schematic diagram of the FGT/CrSBr device structure. FGT is placed on the top layer, and CrSBr is positioned on the bottom layer to make direct contact with the electrodes. b Optical images of the CrSBr device (upper panel) and the FGT/CrSBr device (lower panel). The red and green dashed lines indicate the areas of CrSBr and FGT, respectively. Scale bar, 20 µm. c, d MRR of the pristine CrSBr (c) and the CrSBr in the heterostructure (d) versus magnetic field at various temperatures, measured with the field oriented along the out-of-plane. MRR defined as [(R_H − R_H = 0) /R_H = 0] × 100%. The dashed line delineates the onset field of the spin flip. e, f The extracted H_s (e) and MRR (f) vary with temperature. Error bars represent the standard deviation of three measurements. g Schematic diagram of CrSBr/FGT Hall device structure. CrSBr is placed on the top layer, and FGT is positioned on the bottom layer. h Optical images of the FGT device (upper panel) and the CrSBr/FGT device (lower panel). The red and green dashed lines outline the areas of CrSBr and FGT, respectively. Scale bar, 20 µm. i, j R_xy of the pristine FGT (i) and the FGT in the heterostructure (j) versus magnetic field at various temperatures, measured with a perpendicular applied magnetic field. The numerical values beneath the curves correspond to the R_xy parameters extracted from individual traces. k, l The extracted H_c (k) and R_xy (l) as a function of temperature. Error bars represent the standard deviation of three measurements.