Fig. 3: GB dependence of electrical transport.
From: Ballistic transport in nanodevices based on single-crystalline Cu thin films
a Longitudinal resistivity measured at 4.3 K as a function of GB length LGB for the device of width W = 1 μm. Blue solid line represents the Mayadas–Shatzkes (MS) theory fit. b Normalized bend resistance RB as a function of LGB for W = 150 nm. Blue solid line represents the MS theory fit from (a) circles and triangles represent the device without and with annealing processes, respectively. Color of the symbols represents the thickness, tCu. Bottom panels represent misorientation line maps of the single-crystalline Cu(111) thin film (SCCF) without GBs (left), SCCF with some GBs (middle), and polycrystalline Cu thin film (PCCF) (right).
