Fig. 4: Magnetic field dependence of bend resistance and geometrical effect.
From: Ballistic transport in nanodevices based on single-crystalline Cu thin films
a Measurement schematics for symmetrized bend resistance (\({R}_{{\rm{B}}}^{{\rm{s}}}\)) in magnetic field (B). b B dependence of \({R}_{B}^{{\rm{s}}}\) in a single-crystalline Cu(111) thin film (SCCF) Hall bar with widths of W = 1 μm, 250 nm, and 150 nm at temperature T = 4.3 K. c B dependence of antisymmetrized Hall resistivity \({\rho }_{{\rm{x}}{\rm{y}}}^{{\rm{a}}{\rm{s}}}\) in the SCCF Hall bar with various W at T = 1.7 K. Current was applied from terminal 1 to 4, and Hall voltage was measured between terminals 3 and 5. d Calculated effective Fermi surfaces of Cu(111) thin film in the 2D limit at \({k}_{z}\,=\,0\). The inner surfaces of 2D limit Fermi surface are split bands due to confined geometry along the out-of-plane direction (left panel). Calculated effective Fermi surfaces of 2D Cu in periodic zone scheme (right panel). 2D effective Fermi surface is obtained by band unfolding to 3D. Color of the band represents the spectral weight of the effective band. e Calculated effective Fermi surfaces of 1D Cu(111) at \({k}_{z}\,=\,0\) (left panel) and calculated effective Fermi surfaces of 1D Cu in periodic zone scheme (right panel). 1D effective Fermi surface is obtained by band unfolding to 2D.
