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Ferroelectricity-modulated asymmetric van der Waals heterostructure for ultralow-power neuromorphic synapse and logic-in-memory operations
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  • Published: 14 March 2026

Ferroelectricity-modulated asymmetric van der Waals heterostructure for ultralow-power neuromorphic synapse and logic-in-memory operations

  • Jiake Zhi1 na1,
  • Yao Wen  ORCID: orcid.org/0000-0003-3518-53941 na1,
  • Jiajie Chen1,
  • Chuanyang Cai1,
  • Shoufeng Yang1,
  • Hao Zhu1,
  • Ruiqing Cheng  ORCID: orcid.org/0000-0002-3618-47591,
  • Lei Yin1,
  • Shiheng Liang  ORCID: orcid.org/0000-0002-2133-26592 &
  • …
  • Jun He  ORCID: orcid.org/0000-0002-5998-52251,3,4 

Nature Communications , Article number:  (2026) Cite this article

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We are providing an unedited version of this manuscript to give early access to its findings. Before final publication, the manuscript will undergo further editing. Please note there may be errors present which affect the content, and all legal disclaimers apply.

Subjects

  • Nanoscale devices
  • Semiconductors
  • Two-dimensional materials

Abstract

Vertical integration of two-dimensional materials holds tremendous potential for integrated sensing, memory, and computing applications, yet it still confronts challenges such as single device functionality, limited in-memory logic capability, and high power consumption. To address these issues, we propose an asymmetric van der Waals integration strategy based on an In₂Se₃/MoOₓ/MoS₂/graphene heterojunction, which integrates five reconfigurable logic gates (AND, OR, NOT, NOR, and NAND), dual-mode photodetection (~10 fA dark current, a high responsivity of 89.3 mA/W and a specific detectivity of 1.4 × 10¹¹Jones), and low-power neurosynaptic functions (7-bit conductance states, subfemtojoule energy consumption) into a single device. By virtue of these characteristics, the device enables high-precision image recognition, simulation of classical Pavlovian conditioning and single-pixel dual-band optical imaging. This work paves a feasible path for the development of multifunctionally integrated sensor-memory-computing devices.

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Data availability

The data that support the findings of this study are available from the corresponding author on request.

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Acknowledgements

This work was supported by The National Key Research and Development Program of China (2023YFB3609900(Y.W.), The National Natural Science Foundation of China (Nos. 92464303(J.H.), U23A20364(J.H.), 12574128(Y.W.), 12274119(S.L.), 62134001(Y.W.), U25A20499(R.C.)).

Author information

Author notes
  1. These authors contributed equally: Jiake Zhi, Yao Wen.

Authors and Affiliations

  1. Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan, China

    Jiake Zhi, Yao Wen, Jiajie Chen, Chuanyang Cai, Shoufeng Yang, Hao Zhu, Ruiqing Cheng, Lei Yin & Jun He

  2. College of Physics, Hubei University, Wuhan, China

    Shiheng Liang

  3. Wuhan Institute of Quantum Technology, Wuhan, China

    Jun He

  4. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China

    Jun He

Authors
  1. Jiake Zhi
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Contributions

J.Z. and Y.W. contributed equally to this work. J.H. and S.L. supervised the project, while J.Z. and Y.W. conceived and designed the experiments. J.Z. was responsible for device fabrication, photoelectrical performance measurement, and analysis. J.C. was in charge of device characterization. Data analysis and manuscript preparation were carried out by J.Z. and Y.W. in consultation with all other authors, including C.C., S.Y., H.Z., R.C., and L.Y.

Corresponding authors

Correspondence to Yao Wen, Shiheng Liang or Jun He.

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Zhi, J., Wen, Y., Chen, J. et al. Ferroelectricity-modulated asymmetric van der Waals heterostructure for ultralow-power neuromorphic synapse and logic-in-memory operations. Nat Commun (2026). https://doi.org/10.1038/s41467-026-70668-w

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  • Received: 18 September 2025

  • Accepted: 26 February 2026

  • Published: 14 March 2026

  • DOI: https://doi.org/10.1038/s41467-026-70668-w

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