Fig. 1: Structure and fundamental properties of artificial neuron and synapse.

a The device functionalities for spiking neural networks and schematic of the EB-MTJs stack structure with cross-sectional transmission electron microscopy (TEM) image. b Magnetic hysteresis loops of the device with the antiferromagnetic layer preset to the n+ and n- states, corresponding to the P state and AP state under zero field. c,d SOT switching curves of the circular and elliptical devices under 0.4 ns pulses, with their corresponding SEM images. The TMR ratios of the two devices reach 72.0% and 92.4%, respectively.