Fig. 3: Neuronal device exhibiting LIF characteristics.

a Experimental diagram for time-resolved characterization of the neuron device. Scale bar: 500 nm. b Switching curves under different pulse widths. c Energy consumption required for writing under different pulse widths, with error bars representing the standard deviation (SD). The inset shows the critical switching voltage of the device under different pulse widths. d Resistance of the device in the AP (P) state as a function of write pulse number up to 1E11. The inset shows that the switching loops exhibit negligible change before and after the endurance test, demonstrating the excellent endurance of the device. e Time-resolved resistance evolution under repeated sub-threshold pulses, demonstrating thermal integration and leaky relaxation, where the blue curves show the device resistance values under different pulse numbers with error bars representing the SD. f Dependence of integration and leakage dynamics on the inter-pulse interval. g Integrate-and-fire states of the device under various pulse numbers and current densities.