Abstract
Two-dimensional (2D) semiconductors hold promise for next-generation electronics, yet the lack of scalable p-type counterparts remains a major bottleneck, with prior studies largely limited to discrete devices or simple circuits. Here we report the realization of medium-scale integrated circuits (MSICs) based on wafer-scale p-type 2D semiconductors, enabled by the controlled synthesis of uniform 4-inch 2H-MoTe2 films. A precursor-engineering strategy that integrates thickness-tunable Mo precursors with a sustained-release chalcogen supply enables deterministic thickness control and wafer-scale uniformity. The resulting p-type transistors exhibit highly reproducible characteristics, including on/off ratios of ~105 and mobilities of ~7 cm2 V−1 s−1under low operating voltages. Leveraging a device density exceeding 1300 cm−2, we demonstrate a 140-transistor full adder, showing the potential of our approach towards the realization of future large-scale 2D complementary metal-oxide-semiconductor (CMOS) circuits.
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The data of this report has been included in the published article and its Supplementary Information. Additional raw data are available from the corresponding authors upon request.
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All the codes that support the findings of this study are available from the corresponding authors upon request.
References
Kim, K. S. et al. The future of two-dimensional semiconductors beyond Moore’s law. Nat. Nanotechnol. 19, 895–906 (2024).
Wang, S. et al. Two-dimensional devices and integration towards the silicon lines. Nat. Mater. 21, 1225–1239 (2022).
Zhao, M. et al. Large-scale chemical assembly of atomically thin transistors and circuits. Nat. Nanotechnol. 11, 954–959 (2016).
Lu, D. et al. Monolithic three-dimensional tier-by-tier integration via van der Waals lamination. Nature 630, 340–345 (2024).
Zhu, K. et al. The development of integrated circuits based on two-dimensional materials. Nat. Electron. 4, 775–785 (2021).
Liu, L. et al. Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire. Nature 605, 69–75 (2022).
Tong, L. et al. Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide. Nat. Electron. 6, 37–44 (2022).
Afzal, A. M., Iqbal, M. Z., Dastgeer, G., Ahmad, Au & Park, B. Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe2 and PdSe2. Adv. Sci. 8, https://doi.org/10.1002/advs.202003713 (2021).
Das, S. et al. Transistors based on two-dimensional materials for future integrated circuits. Nat. Electron. 4, 786–799 (2021).
Li, W. et al. Approaching the quantum limit in two-dimensional semiconductor contacts. Nature 613, 274–279 (2023).
Li, T. et al. Reconfigurable, non-volatile neuromorphic photovoltaics. Nat. Nanotechnol. 18, 1303–1310 (2023).
Meng, W. et al. Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix. Nat. Nanotechnol. 16, 1231–1236 (2021).
Xia, Y. et al. 12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture. Nat. Mater. 22, 1324–1331 (2023).
Jayachandran, D. et al. Three-dimensional integration of two-dimensional field-effect transistors. Nature 625, 276–281 (2024).
Pendurthi, R. et al. Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors. Nat. Nanotechnol. 19, 970–977 (2024).
Hwangbo, S., Hu, L., Hoang, A. T., Choi, J. Y. & Ahn, J.-H. Wafer-scale monolithic integration of full-colour micro-LED display using MoS2 transistor. Nat. Nanotechnol. 17, 500–506 (2022).
Pan, Y. et al. Heteroepitaxy of semiconducting 2H-MoTe2 thin films on arbitrary surfaces for large-scale heterogeneous integration. Nat. Synth. 1, 701–708 (2022).
Xu, X. et al. Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2. Science 372, 195–200 (2021).
Song, S. et al. Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes. Nat. Commun. 14, 4747 (2023).
Larentis, S. et al. Reconfigurable complementary monolayer MoTe2 field-effect transistors for integrated circuits. ACS Nano 11, 4832–4839 (2017).
Ma, R. et al. MoTe2 lateral homojunction field-effect transistors fabricated using flux-controlled phase engineering. ACS Nano 13, 8035–8046 (2019).
Liu, X., Islam, A., Guo, J. & Feng, P. X. L. Controlling polarity of MoTe2 transistors for monolithic complementary logic via schottky contact engineering. ACS Nano 14, 1457–1467 (2020).
Cai, J. et al. High-Performance Complementary Circuits from Two-Dimensional MoTe2. Nano Lett 23, 10939–10945 (2023).
Li, M. et al. Large-Scale p-Type Nonvolatile FGFET Memory Array Based on 2H-MoTe2. Adv. Electron. Mater. 10.1002/aelm.202400386 (2024).
Cho, Y. et al. Fully Transparent p-MoTe2 2D Transistors Using Ultrathin MoOx/Pt Contact Media for Indium-Tin-Oxide Source/Drain. Adv. Funct. Mater. 28, https://doi.org/10.1002/adfm.201801204 (2018).
Xu, X. et al. Millimeter-scale single-crystalline semiconducting mote2 via solid-to-solid phase transformation. J.Am.Chem.Soc 141, 2128–2134 (2019).
Zhou, L. et al. Large-area synthesis of high-quality uniform few-layer MoTe2. J.Am.Chem.Soc 137, 11892–11895 (2015).
Wang, Y. et al. P-type electrical contacts for 2D transition-metal dichalcogenides. Nature 610, 61–66 (2022).
Oberoi, A. et al. Toward high-performance p-type two-dimensional field effect transistors: contact engineering, scaling, and doping. ACS Nano 17, 19709–19723 (2023).
Wu, Q. et al. Resolidified Chalcogen Precursors for High-Quality 2D Semiconductor Growth. Angew. Chem. Int. Ed. 62, e202301501 (2023).
Cheng, Z. et al. Large-Scale N-Type FET and Homogeneous CMOS Inverter Array Based on Few-Layer MoTe2. Adv. Electron. Mater. 9, https://doi.org/10.1002/aelm.202300268 (2023).
Jia, X. et al. High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown n-MoS2 and p-MoTe2. Small 19, e2207927 (2023).
Ma, D. et al. Pushing the thinness limit of silver films for flexible optoelectronic devices via ion-beam thinning-back process. Nat. Commun. 15, 2248 (2024).
Li, R. et al. Controlled lattice deformation for high-mobility two-dimensional MoTe2 growth. J. Materiomics, https://doi.org/10.1016/j.jmat.2024.03.013 (2024).
Zhang, S. et al. Field Effect Transistor Sensors Based on In-Plane 1T′/2H/1T′ MoTe2 Heterophases with Superior Sensitivity and Output Signals. Adv. Funct. Mater. 32, https://doi.org/10.1002/adfm.202205299 (2022).
Xu, X. et al. Atomic-Precision Repair of a Few-Layer 2H-MoTe2 Thin Film by Phase Transition and Recrystallization Induced by a Heterophase Interface. Adv. Mater. 32, e2000236 (2020).
Sung, J. H. et al. Coplanar semiconductor–metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy. Nat. Nanotechnol. 12, 1064–1070 (2017).
Xu, X. et al. Scaling-up atomically thin coplanar semiconductor–metal circuitry via phase engineered chemical assembly. Nano Lett 19, 6845–6852 (2019).
Yang, S. et al. Large-Scale Vertical 1T′/2H MoTe2 nanosheet-based heterostructures for low contact resistance transistors. ACS Appl. Nano Mater. 3, 10411–10417 (2020).
Zhang, X. et al. Low Contact Barrier in 2H/1T′ MoTe2 in-plane heterostructure synthesized by chemical vapor deposition. ACS Appl. Mater. Interfaces 11, 12777–12785 (2019).
Lu, Z. et al. Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration. Nat. Commun. 14, 2340 (2023).
Yang, X. et al. Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale. Nat. Nanotechnol. 18, 471–478 (2023).
Packan, P. et al. High performance 32nm logic technology featuring 2nd generation high-k + metal gate transistors. In: 2009 IEEE International Electron Devices Meeting (IEDM)) (2009).
Auth, C. et al. 45nm High-k + metal gate strain-enhanced transistors. In: 2008 Symposium on VLSI Technology) (2008).
Fathipour, S. et al. Exfoliated multilayer MoTe2 field-effect transistors. Appl. Phys. Lett. 105, 192101 (2014).
Lee, K. et al. Effects of Oxygen Plasma Treatment on Fermi-Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe2 FETs. Adv. Electron. Mater. 9, https://doi.org/10.1002/aelm.202200955 (2023).
Ahmed, F., et al. Multilayer MoTe2 Field-Effect Transistor at High Temperatures. Adv. Mater. Interfaces 8, (2021).
Pu, J. et al. Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers. Adv. Mater. 28, 4111–4119 (2016).
Qu, D. et al. Carrier-type modulation and mobility improvement of thin MoTe2. Adv. Mater. 29, 10.1002/adma.201606433 (2017).
Wu, G. et al. MoTe2 p–n homojunctions defined by ferroelectric polarization. Adv. Mater. 32, 10.1002/adma.201907937 (2020).
Zou, T. et al. High-performance solution-processed 2d p-type wse2 transistors and circuits through molecular doping. Adv. Mater. 35, 10.1002/adma.202208934 (2022).
Ghimire, M. K. et al. Defect-Affected Photocurrent in MoTe2 FETs. ACS Appl. Mater. Interfaces 11, 10068–10073 (2019).
Hu, W. et al. Chemical dopant-free controlled mote2/mose2 heterostructure toward a self-driven photodetector and complementary logic circuits. ACS Appl. Mater. Interfaces 15, 18182–18190 (2023).
Ke, Y. et al. Facile p-doping of few-layer mote2 by controllable surface oxidation toward high-performance complementary devices. ACS Appl. Electron. Mater. 2, 920–926 (2020).
Luo, Q. et al. Lateral and Vertical p–n Homojunctions Formed in Few-Layer MoTe2 with In Surface Charge-Transfer Doping. ACS Appl. Electron. Mater. 3, 3428–3435 (2021).
Qi, D. et al. Continuously tuning electronic properties of few-layer molybdenum ditelluride with in situ aluminum modification toward ultrahigh gain complementary inverters. ACS Nano 13, 9464–9472 (2019).
Sun, X. et al. Reconfigurable logic-in-memory architectures based on a two-dimensional van der Waals heterostructure device. Nat. Electron. 5, 752–760 (2022).
Park, Y. J., Katiyar, A. K., Hoang, A. T. & Ahn, J. H. Controllable P- and N-type conversion of MoTe2 via oxide interfacial layer for logic circuits. Small 15, e1901772 (2019).
Wu, P., Reis, D., Hu, X. S. & Appenzeller, J. Two-dimensional transistors with reconfigurable polarities for secure circuits. Nat. Electron. 4, 45–53 (2020).
Xiong, X. et al. A transverse tunnelling field-effect transistor made from a van der Waals heterostructure. Nat. Electron. 3, 106–112 (2020).
Acknowledgements
This work was supported in part by the National Key R&D Program of China under Grant 2024YFB4405300 (L.X.), 2022YFA1402501 (A.P.) and 2022YFA1204300 (A.P.); the National Natural Science Foundation of China under Grant 62101181 (L.X.),52221001 (A.P.), 62090035 (A.P.), 52372146 (A.P.) and U22A20138 (A.P.); the Natural Science Foundation of Hunan Province under Grant 2023JJ20016 (L.X.); and the Key Research and Development Plan of Hunan Province under Grant 2022GK3002 (A.P.) and 2023GK2012 (A.P.); and the Hunan Provincial Innovation Foundation For Postgraduate CX20240403 (H.W.).
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L.X. conceived the experiment. L.X. and A.P. supervised this project. L.X. and H.W. designed the devices and circuits. H.W. fabricated the devices, performed the electrical measurements, and analyzed and interpreted the data with input from Z.L., B.Z., Z.T., H.Y., Y.Y., Y.W., H.Z., Q.S., H.L, G.W., D.L., and H.W. prepared the MoTe2 thin films. The manuscript was written with contributions from all authors, and all authors approved the final version of the manuscript.
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Wang, H., Luo, Z., Zheng, B. et al. Medium-scale integrated circuits based on p-type 2D semiconducting MoTe2. Nat Commun (2026). https://doi.org/10.1038/s41467-026-70992-1
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DOI: https://doi.org/10.1038/s41467-026-70992-1
