Abstract
Control over charge density wave (CDW) states is technologically promising for the development of ultra-efficient memory devices. However, using electrical pulses for non-volatile resistance switching involving CDW states has so far been limited to cryogenic temperatures. In this work, we investigate a recently discovered layered semiconductor EuTe4, which exhibits the coexistence of distinct CDW orders. We report that electrical pulses can be used for excitation to non-equilibrium, yet stable electronic states across a broad temperature range from 6 K to 400 K. We find that switching occurs through a non-thermal pathway and is reversible via a thermal erase procedure. The resistance of the new electronic state is tunable by the pulse voltage, so the device acts as a memristor. Calculations show fixed bilayer CDW, whereas CDW in single layers shows bistability due to weak Eu-Te links. Low-voltage, fast, and energy-efficient CDW switching holds potential for memristor applications.
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Acknowledgements
We thank T. Mertelj, I. Vaskivskyi, V. Kabanov, and A. Mraz for fruitful discussions. We thank D. Vengust and E. Goreshnik for their assistance with crystal characterization.
Funding
D.M. wishes to acknowledge funding from ERC AdG “HIMMS” and the Slovenian Research and Innovation Agency (ARIS) for programs N1-0290 and N1-0295. R.V., Y.V., and D.M. thank ARIS for funding the research program P1-0040. R.V. acknowledges funding from the Swiss National Science Foundation (SNSF) and ARIS as a part of the WEAVE framework, Grant Number 213148. D. Golež acknowledges the support of programs No. P1-0044, No. J1−2455 and MN-0016−106 of the ARIS.
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Venturini, R., Rupnik, M., Gašperlin, J. et al. Room-temperature memristive switching between charge density wave states. Nat Commun (2026). https://doi.org/10.1038/s41467-026-73267-x
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DOI: https://doi.org/10.1038/s41467-026-73267-x
