Fig. 5 | npj Computational Materials

Fig. 5

From: Voltage-driven charge-mediated fast 180 degree magnetization switching in nanoheterostructure at room temperature

Fig. 5

Necessary conditions for the in-plane and perpendicular 180° switching (n = 11, a = 2b = 46 nm): switching criteria \({N_z} - 2{K_{E = 0}}{\rm{/}}{\mu _0}M_s^2 \, > \, {N_x} \, > \, {N_z} - 2{K_{E >0}}{\rm{/}}{\mu _0}M_s^2\) or \({N_z} - 2{K_{E < 0}}{\rm{/}}{\mu _0}M_s^2 \, > \, {N_x} \, > \, {N_z} - 2{K_{E = 0}}{\rm{/}}{\mu _0}M_s^2\), E induced energy change \(\left| {\Delta {G^{\rm{k}}}} \right|\) beyond 40 k B T, initial energy barrier ΔG in (ΔG pe) over 40 k B T

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