Fig. 9 | npj Computational Materials

Fig. 9

From: Physics and applications of charged domain walls

Fig. 9

Resistive switch using CDW in BiFeO3 (BFO) film on TbScO3 (TSO) substrate with (La,Sr)MnO3 (LSMO) electrode. a Configuration containing only NDWs (109° DW and 180° DW). b Configuration containing also a segment CDW (71° CDW). Both configurations are stable in absence of applied voltage. The configuration with a CDW segment is up to 105 times more conductive than the other. By applying positive or negative voltage to the tip one can switch between two configurations thus providing the resistive switching with the “on/off” ratio up to 105. After ref. 8

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