Fig. 5: Band structures of 2D SnSe with 91.48° GB in short energy range.
From: Enhancing power factor of SnSe sheet with grain boundary by doping germanium or silicon
Band structure in a short energy range for the 2D SnSe sheet a without GB, b with 91.48° GB, and for c the Ge-doped and d Si-doped SnSe sheet with 91.48° GB.
