Fig. 1: Tunable αR in doped BiTeI.
From: Defect-mediated Rashba engineering for optimizing electrical transport in thermoelectric BiTeI
a Schematic illustration of the Rashba band structure near the conduction band minimum of BiTeI. b Crystal structure of BiTeI. c Dopants considered in this study. d Dopant−αR map for BiTeI with a doping content of 0.11. The effect of doping content variation on αR is also calculated for the two dopants Sc and Ag. The colors of the elements marked in d correspond to the colors in c. The hollow diamond indicates the αR of pristine BiTeI (αR = 3.71 eV Å). The gray rectangle in d shows the optimal αR range for thermoelectric PFs.
