Fig. 2: High-throughput screening of doped BiTeI with the Rashba effect.
From: Defect-mediated Rashba engineering for optimizing electrical transport in thermoelectric BiTeI
a–d Two-dimensional Fermi surface spin textures of BiTeI with Rashba splitting at the energy level labeled by the gray dashed line in the inset of e. The colors indicate the magnitude of the spin polarization along the (a) x, (c) y, and (d) z directions. b Enlarged figure of the shaded part of a. e Workflow of the FPST method for HTP screening of the Rashba effect. The five points are labeled in the inset of e. See the text for details.
