Table 1 Variation in the band gap and αR of systems with VIA and VIIA group dopants.
From: Defect-mediated Rashba engineering for optimizing electrical transport in thermoelectric BiTeI
System | Band gap (eV) | αR (eV Å) |
|---|---|---|
BiTeI | 0.35 | 3.71 |
BiTeI0.89Br0.11 | 0.85 | 1.30 |
BiTeI0.89F0.11 | 0.41 | 2.64 |
BiTeI0.89At0.11 | 0.32 | 4.05 |
BiSe0.11Te0.89I | 0.40 | 3.54 |
BiS0.11Te0.89I | 0.43 | 3.58 |
BiPo0.11Te0.89I | 0.25 | 4.47 |
