Fig. 5: Transfer characteristics of the InSe MOSFET.
From: Machine learning method for tight-binding Hamiltonian parameterization from ab-initio band structure
a Transfer characteristics of the device with the drain-source voltage VDS being 0.5, 0.3, and 0.1 V. b Transfer characteristics of the device with the gate voltage VGS being −0.3, 0.0, and 0.3 V.
