Fig. 8: Comparison of the charge distributions of the 13-AGNR-MOSFET using the WTB device Hamiltonian (above) and the produced TB device Hamiltonian (below).
From: Machine learning method for tight-binding Hamiltonian parameterization from ab-initio band structure
The gate voltage VGS is set to be 0 V, and the drain-source voltage VDS is set to be 0.2 V. The gray balls represent C atoms, whereas H atoms on the edges are not plotted.
