Fig. 3: Carrier relaxation times and the hole mobility for vacancy defects in silicon.
From: Ab initio electron-defect interactions using Wannier functions
a Electron–defect RTs obtained from directly computed and interpolated e–d matrix elements. Here, εc is the conduction band minimum and εv the valence band maximum. b Convergence of the hole mobility with respect to the size of the fine BZ grid used for interpolation, shown for both uniform and random grids. The computed hole mobilities at 10 K and 100 K from ref. 18 are also shown. A reference vacancy concentration of 1 p.p.m. is used in all calculations.
