Table 1 Ab initio calculations for 20 semiconductors from G3.

From: Unsupervised discovery of thin-film photovoltaic materials from unlabeled data

Compound

Space group

Lattice constant (Ã…)

Lattice angle (°)

Volume (Ã…3)

Eg (eV)

Ag2BaTiS4

I222

a = 6.50, b = 7.46, c = 8.28

α = β = γ = 90

395.75

D1.42

Ag2BaTiSe4

I222

a = 6.77, b = 7.74, c = 8.54

α = β = γ = 90

447.37

D1.18

Ag2BaCrS4

I222

a = 6.54, b = 7.18, c = 8.16

α = β = γ = 90

383.74

I0.70

Ag2BaZrS4

I222

a = 6.59, b = 7.49, c = 8.41

α = β = γ = 90

415.37

I1.93

Ag2BaZrSe4

I222

a = 6.83, b = 7.86, c = 8.70

α = β = γ = 90

466.91

I1.60

Ag2BaHfS4

I222

a = 6.58, b = 7.49, c = 8.40

α = β = γ = 90

414.09

D2.13

Ag2BaHfSe4

I222

a = 6.82, b = 7.89, c = 8.67

α = β = γ = 90

466.67

D1.76

Ag2BaSiSe4

I222

a = 7.02, b = 7.44, c = 8.36

α = β = γ = 90

436.22

D1.33

Cu2BaTiS4

P31

a = b = 6.29, c = 15.73

α = β = 90, γ = 120

538.00

I2.27

Cu2BaTiSe4

P31

a = b = 6.58, c = 16.48

α = β = 90, γ = 120

619.00

I2.02

Cu2BaCrS4

P31

a = b = 6.21, c = 15.32

α = β = 90, γ = 120

511.18

I2.24

Cu2BaCrSe4

P31

a = b = 6.49, c = 16.17

α = β = 90, γ = 120

590.19

I2.30

Cu2BaMnS4

P31

a = b = 6.18, c = 15.29

α = β = 90, γ = 120

505.29

I2.09

Cu2BaMnSe4

P31

a = b = 6.48, c = 15.99

α = β = 90, γ = 120

580.86

I0.87

Cu2BaZrS4

P31

a = b = 6.39, c = 16.00

α = β = 90, γ = 120

565.61

I2.69

Cu2BaZrSe4

P31

a = b = 6.67, c = 16.83

α = β = 90, γ = 120

648.93

I2.40

Cu2BaCoS4

P31

a = b = 6.21, c = 15.00

α = β = 90, γ = 120

500.60

I2.54

Cu2BaHfS4

P31

a = b = 6.36, c = 16.09

α = β = 90, γ = 120

563.16

I3.01

Cu2BaHfSe4

P31

a = b = 6.67, c = 16.82

α = β = 90, γ = 120

647.77

I2.73

Cu2BaSiS4

P31

a = b = 6.20, c = 15.46

α = β = 90, γ = 120

515.16

I3.19

  1. Optimized lattice constants, lattice angles, volumes, and band gaps are presented.
  2. D the direct band gap, I the indirect band gap.