Fig. 3: Sign-reversible valley-dependent anomalous transport properties in VSi2N4.
From: Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors
The Berry curvature Ω(k) (first row), VAHE (second row), VANE (third row), and VMOKE (fourth row) under three different strains of 0% (a), 1.6% (b), and 2% (c), respectively. The results of VMOFE (not shown here) are rather similar to that of VMOKE. The unit of VANE is set to be α0 = kBe/h (e is the elementary charge, kB and h are Boltzmann and Planck constants, respectively). Yellow shaded areas indicate the regions of large valley splitting. The Berry curvature is plotted at the energy where the anomalous Hall conductivity reaches its maximum. The legends of K, K\({}^{\prime}\), and TOT represent contributions from K valley, K\({}^{\prime}\) valley, and the entire Brillouin zone, respectively.
