Fig. 5: Temperature dependence of the mobility of silicon for an n-type carrier concentration of 2 × 1019 cm−3.
From: The elphbolt ab initio solver for the coupled electron-phonon Boltzmann transport equations
The red circles are measurements by Yamanouchi et. al.53 on samples 23, 25, and 32, with dopant densities 2.28 × 1019, 2.42 × 1019, and 3.35 × 1019 cm−3, respectively.
