Fig. 8: Effect of lateral cut-off distance on STM images.
From: Scanning tunneling microscopy of buried dopants in silicon: images and their uncertainties
Panels represent a series of simulated STM images for increasing values of lateral cut-off distance. In each image, every pixel is simulated by adding the contributions from all atoms ± Rxy from the image point in both x and y lateral dimension and up to depth Rz = 20 Å, resulting in the total volume for each pixel equal to \({(2{R}_{xy})}^{2}\times {R}_{z}\).
