Fig. 4: Electronic properties and device schematic.
From: High-throughput design of functional-engineered MXene transistors with low-resistive contacts
a 2D hexagonal first Brillouin Zone (BZ) of MXene semiconducting materials. Γ, M, and K are the high symmetry points of the BZ. b The HSE band structure of Ti-Sc-N-NO-SCN. VBM and CBM are located at Γ and exhibit isotropic dispersion. c The HSE band structure of Zr-Sc-C-O-OCN. VBM is located at Γ and has isotropic dispersion, while CBM is located at M, and the dispersion is anisotropic. d Schematic of the cross-sectional (x-z plane) view of the proposed SB transistor.
