Fig. 5: Device characteristics of M13p and M13n.
From: High-throughput design of functional-engineered MXene transistors with low-resistive contacts
a Transfer characteristics of transistors at a drain bias of |VD| = 0.65 V for LCH = 10 nm to 3 nm. b Energy resolved current spectrum (JD) superimposed on valence (conduction) band edge profile of transistor M13p (M13n) at OFF state for LCH = 5 nm to 3 nm.
