Fig. 1: Effect of the chemistry and substrate rotation on the growth coverage and velocity profile.
From: A computational framework for guiding the MOCVD-growth of wafer-scale 2D materials
a The edge energy as a function of Se-chemical potential varies between W-rich and Si-rich local environments for the five configured edge types; ΔμSe is a difference between μSe(bulk) and μSe. Steady-state concentration distribution of the precursors, W(CO)6 (bottom) and H2Se (top), for the stationary substrate (b) and one rotating at 150 rpm (c), are shown – arrow indicates the flow direction. The corresponding PF simulation for the stationary (d) and rotating substrate (e) are depicted along with the distribution analysis of the islands (f, g). Colors show different island orientations. The abscissa shows island area (designated A) while the ordinate shows island count in each bin (labeled with C). The equivalent experimental measurements are shown (h-i). j Variation in the thickness of the as-grown films across the diameter of the substrate. Error bars indicate standard deviation of the island thicknesses in each region. Velocity streamlines in the volume above the substrate for stationary substrate (k) and one that is rotating at 150 rpm (l). The colored volume shows the gas phase on the left half of the substrate, where the color map shows magnitude of the velocity. The substrate is shown as a green circle.
