Fig. 3: Manipulation of BMS by the ferroelectric gate and VSeF/Al2Se3 bilayer heterostructures.
From: Nonvolatile electrical control of spin polarization in the 2D bipolar magnetic semiconductor VSeF
a Schematic diagram of spin FET based on BMS, the spin orientations in the conducting channel (BMS region, marked in blue) can be controlled by switching the electric polarization of ferroelectric dielectric (FE region, marked in yellow). The bottom panel depicts the desired band alignments between BMS and FE under different ferroelectric polarized states, and associated charge transfers. Here, the solid and dashed lines represent VBM and CBM, respectively. Black arrows denote the electron spin, where electrons fill to the VBMs. The spin-up and spin-down bands of BMS are split, due to the intrinsic magnetism of BMS. b Top and side views of VSeF/Al2Se3 bilayer heterostructures. The red arrow represents the polarization direction of Al2Se3. c Band alignments of VSeF/Al2Se3 (↑) and VSeF/Al2Se3 (↓) with respect to the vacuum level of VSeF. The red and blue bars show the band edges of spin-up and spin-down channels of BMS, respectively, the purple bars show the band edges of FE. d Layer-resolved PDOS of VSeF/Al2Se3 (↑) and VSeF/Al2Se3 (↓), where the orange and purple lines represent the PDOS contributed by VSeF and Al2Se3, respectively. The potential energy decreases along the direction of black dashed line.
