Fig. 4: VSeF/biAl2Se3 trilayer heterostructures.
From: Nonvolatile electrical control of spin polarization in the 2D bipolar magnetic semiconductor VSeF
a Side views of VSeF/biAl2Se3 trilayer heterostructures. The red arrow represents the polarization direction of Al2Se3. b Band alignments of VSeF/biAl2Se3 (↑) and VSeF/biAl2Se3 (↓) with respect to the vacuum level of VSeF. The red and blue bars depict the band edges of spin-up and spin-down channel of VSeF, respectively. The purple bars depict the band edges of two layers of FE Al2Se3. c, d Charge density difference, planar-averaged density difference (black line) and the integral (red lines) of planar-averaged density difference along z-direction for VSeF/biAl2Se3 (↑) and VSeF/biAl2Se3 (↓), respectively, where the blue dashed lines indicate the atomic boundary of each layer, and the cyan and magenta isosurfaces represent electronic accumulation and depletion with isovalue of 2.03 × 10–3 e Å−3, respectively. e, f Layer-resolved PDOS of VSeF/biAl2Se3 (↑) and VSeF/biAl2Se3 (↓). The potential energy decreases along the direction of black dashed line. FE1 and FE2 denote the upper Al2Se3 layer and the bottom Al2Se3 layer, respectively. The orange, purple, and pink lines represent the PDOS contributed by VSeF, FE1, and FE2, respectively.
