Fig. 9: Loss function and interior lattice displacement of SiC particle reconstruction.

a Loss function trend for the SiC crystal reconstruction, for the optimization plan shown in Table 3 of the Supplementary Information. b Final estimated SiC nanocrystal electron density \({{{\mathcal{A}}}}\), from a highly permissive mask threshold of 0.1. The red line is the contour at a threshold of \({{{\mathcal{A}}}}=0.65\), representing the approximate crystal surface. c Reconstructed components of the lattice distortion within the SiC crystal (centered at zero volume-averaged distortion in each dimension), within the estimated crystal surface at \({{{\mathcal{A}}}}=0.65\).