Fig. 2: Dispersion of conduction (negative) and valence (positive) ZPRsFr energies versus the effective mass, \({m}_{{{{\rm{sFr}}}}}^{* }\) (top), and effective phonon frequency, \({\omega }_{{{{\rm{eff}}}}}^{{{{\rm{sFr}}}}}\) (bottom) for all materials with ZPRsFr below 3000 meV. | npj Computational Materials

Fig. 2: Dispersion of conduction (negative) and valence (positive) ZPRsFr energies versus the effective mass, \({m}_{{{{\rm{sFr}}}}}^{* }\) (top), and effective phonon frequency, \({\omega }_{{{{\rm{eff}}}}}^{{{{\rm{sFr}}}}}\) (bottom) for all materials with ZPRsFr below 3000 meV.

From: High-throughput analysis of Fröhlich-type polaron models

Fig. 2: Dispersion of conduction (negative) and valence (positive) ZPRsFr energies versus the effective mass, $${m}_{{{{\rm{sFr}}}}}^{* }$$ m sFr * (top), and effective phonon frequency, $${\omega }_{{{{\rm{eff}}}}}^{{{{\rm{sFr}}}}}$$ ω eff sFr (bottom) for all materials with ZPRsFr below 3000 meV.

Same conventions as in Fig. 1. A rough square root behavior (Equation (10)) governs the maximum accessible ZPRsFr for a given mass, and a degree of clustering is visible of the frequencies as a function of chemical period, with the lowest frequencies for halides, followed by chalcogenides, then the remaining materials. Dependence with the band effective mass (Eq. (32)) shows a dominant linear behavior, with a wider dispersion for valence bands when compared to the conduction band masses.

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