Fig. 2: Calculations of phonon- and impurity-limited carrier mobility using EPW.
From: Electron–phonon physics from first principles using the EPW code
a Mobility of silicon as a function of temperature, for the following three cases: phonon scattering only (black disks and lines); phonon and ionized impurity scattering, with an impurity concentration of 1.75 × 1016 cm−3 (indigo disks and lines), and with a concentration of 1.3 × 1017 cm−3 (green disks and lines). Experimental data for the same concentrations are shown as diamonds of the same color62,63,219. b Same as in (a) but for the hole mobility of silicon. The impurity concentrations are 2.4 × 1016 cm−3 (indigo) and 2.0 × 1017 cm−3 (green), respectively. c Electron mobility of silicon at 300 K, as a function of ionized impurity concentration: black disks and lines are calculations, black diamonds are experiments64,66. d Same as in (c) but for the hole mobility.
