Fig. 4: Analysis of the excitonic states with dominant contributions from the MoSe2 intralayer excitations. | npj Computational Materials

Fig. 4: Analysis of the excitonic states with dominant contributions from the MoSe2 intralayer excitations.

From: Exciton fine structure in twisted transition metal dichalcogenide heterostructures

Fig. 4: Analysis of the excitonic states with dominant contributions from the MoSe2 intralayer excitations.

For each state, we show the GW band-resolved unfolded exciton contribution within the UBZ of MoSe2. Red and blue colors mark the hole and electron state contributions, respectively. Black arrows represent direct and optically bright (solid lines) or dark (dashed lines) transitions in the UBZ, and gray arrows represent the additional momentum indirect contributions in the UBZ. s is the spin-allowed probability for direct transitions in the UBZ, averaged over all excitons within 10 meV around each marked state.

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