Fig. 11: Compression of c-oriented GaN nanopillar.
From: Neural network potential for dislocation plasticity in ceramics
a, b Model of a c-oriented GaN nanopillar. c–f Snapshots of atomic configurations under a compressive engineering strain of ε = −0.1164, projected along c, d [1\(\overline{1}\)00] and e, f [0\(\overline{1}\)10]. They were analyzed via (c, e) the identify diamond structure (IDS) method94, and (d, f) the dislocation extraction algorithm (DXA)95 based on the Ga HCP sublattice. The slip planes are highlighted by black and red dashed lines, with angles of approximately 58° and 70° from the basal plane, respectively. Atoms within perfect wurtzite structures are not shown in (a–c, e).
