Fig. 5: PL spectra before and after PIBO to fabricate InGaAsP with λg = 1180 nm. | npj Computational Materials

Fig. 5: PL spectra before and after PIBO to fabricate InGaAsP with λg = 1180 nm.

From: Physics-informed Bayesian optimization suitable for extrapolation of materials growth

Fig. 5

a PL spectra with six samples (N1-N6 InGaAsP layers). The λg values estimated from these PL measurements were used as a preliminary dataset for PIBO. b PL spectrum for the N7 InGaAsP layer. The λg value is within the target region of 1180\(\pm\)10 nm. c λg as a function of the number of crystal growth runs.

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