Fig. 8: PL spectra before and after PIBO to fabricate InGaAsP with λg = 1100 nm.
From: Physics-informed Bayesian optimization suitable for extrapolation of materials growth
a PL spectra for the N1-N7 InGaAsP layers. The λg values estimated from these PL measurements were used as a preliminary dataset for PIBO. b PL spectra for the N8-N13 InGaAsP layers. The λg value of the N13 InGaAsP layer is within the target region of 1100\(\pm\)10 nm. c λg as a function of the number of crystal growth runs. In (c), the triangles and circles represent the preliminary data and the data obtained during the PIBO process.
