Table 3 Electronic temperatures used in QE calculations and GAP hyperparameters

N_e/Si	T_e (K) [gapped]	T_e (K) [non-gapped]	Cutoff [Å]	n_sparse	\({n}_{\max }\)	\({l}_{\max }\)
0	1579	1579	5.0	12,000	12	10
0.05	1579	395	4.0	6000	10	6
0.1	1579	790	5.0	9000	12	10
0.15	1579	1184	5.5	12,000	14	12
0.2	1579	1579	5.5	12,000	12	12
0.25	1579	1974	5.5	12,000	12	12
0.3	1579	2369	5.5	12,000	12	12
0.4	1579	3158	6.0	12,000	14	12
0.2	3947	1579	5.5	12,000	12	12

List of electronic temperatures used in QE calculations for photoexcited gapped and non-gapped configurations (second and third column, respectively) as a function of fluence (first column). Columns from the fourth on show the optimal hyperparameters used to fit GAP potentials for each database. Optimality is judged from energy, force, and virial RMSEs, and from the accuracy of the phonon dispersion. Starting from 0.1 N_e/Si, higher-energy crystalline phases (hexagonal diamond, bc8, and st12) have been excluded from the database.

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