Fig. 6: Density of states (DOS) for Re0.5Nb0.5(S0.5Se0.5)2 monolayers with \({{\rm{SRO}}}_{{\rm{Re}},{\rm{Nb}}}^{1}\) values of 0.5, 0.537, 0.571, 0.611, 0.648, and 0.667. | npj Computational Materials

Fig. 6: Density of states (DOS) for Re0.5Nb0.5(S0.5Se0.5)2 monolayers with \({{\rm{SRO}}}_{{\rm{Re}},{\rm{Nb}}}^{1}\) values of 0.5, 0.537, 0.571, 0.611, 0.648, and 0.667.

From: Competing sublattice short-range orders and gap state engineering in multicomponent transition-metal dichalcogenide

Fig. 6: Density of states (DOS) for Re0.5Nb0.5(S0.5Se0.5)2 monolayers with $${{\rm{SRO}}}_{{\rm{Re}},{\rm{Nb}}}^{1}$$ SRO Re , Nb 1 values of 0.5, 0.537, 0.571, 0.611, 0.648, and 0.667.

a Partial DOS for each element, in which examples of three types of electronic states are illustrated. b Total DOS and inverse participation ratio (IPR). c Partial DOS for the dxy, dz2 and d(x2-y2) orbitals of Nb. d Partial DOS for the dxy, dz2 and d(x2-y2) orbitals of Re. The vertical line indicates the position of Fermi level.

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