Table 5 Structural parameters and self-energy correction schemes

From: High-efficiency computational methodologies for electronic properties and structural characterization of Ge-Sb-Te based phase-change materials

Material

Space group

Lattice constant (Ã…)

Exact way of shGGA-1/2

\({a}_{0}\)

\({c}_{0}\)

Sb2Te3

\(R\bar{3}m\) (No. 166)

4.34a

4.26b, 4.27c, 4.34i

31.44a

30.45b, 30.45c, 31.29i

shGGA-1/4-1/4

GST-147

\(P\bar{3}m1\) (No. 164)

4.23a

4.24j

24.05a

23.76j

shGGA-0-0-1/2

GST-124

\(R\bar{3}m\) (No. 166)

4.23a

4.27 d, 4.25 h, 4.25 h

41.26a

41.7d, 41.0h, 41.0h

shGGA-0-0-1/2

GST-225

\(P\bar{3}m1\) (No. 164)

4.21a

4.22e, 4.25 h

17.16a

17.24e, 18.27 h

shGGA-0-0-1/2

GST-326

\(R\bar{3}m\) (No. 166)

4.21a

4.21 f, 4.25 h

61.76a

62.31 f, 62.6 h

shGGA-0-0-1/2

GeTe

\(R3m\) (No. 160)

4.23a

4.17 g, 4.23k

10.86a

10.62 g, 10.92k

shGGA-0-1/2

  1. This table compiles the crystallographic parameters (space group and lattice constants) and the detailed self-energy correction schemes employed in the shGGA-1/2 calculations for all six investigated materials.
  2. aThe calculation result of our own.
  3. bExperiment in ref. 82.
  4. cExperiment in ref. 49.
  5. dExperiment at 873 K in ref. 83.
  6. eExperiment in ref. 55.
  7. fExperiment at 90 K in ref. 84.
  8. gExperiment in ref. 56.
  9. hExperiment in ref. 67.
  10. iExperiment in ref. 70.
  11. jExperiment in ref. 68.